U. Gösele: search on Z-Library

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1

Wafer-scale integration of GaAs optoelectronic devices with standard Si integrated circuits using a low-temperature bonding procedure

Georgakilas, A., Deligeorgis, G., Aperathitis, E., Cengher, D., Hatzopoulos, Z., Alexe, M., Dragoi, V., Gösele, U., Kyriakis-Bitzaros, E. D., Minoglou, K., Halkias, G.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

2

Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

T. Akatsu, A. Plössl, R. Scholz, H. Stenzel, U. Gösele

Year:

2001

Language:

english

File:

PDF, 1.09 MB

english, 2001

3

Formation of nanovoids in high-dose hydrogen implanted GaN

I. Radu, R. Singh, R. Scholz, U. Gösele, S. Christiansen, G. Brüderl, C. Eichler, V. Härle

Year:

2006

Language:

english

File:

PDF, 484 KB

english, 2006

4

Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuum

Fecioru, Alin Mihai, Senz, Stephan, Scholz, Roland, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 419 KB

english, 2006

5

Hybrid Polymer−Silicon Proton Conducting Membranes via a Pore-Filling Surface-Initiated Polymerization Approach

Yameen, Basit, Kaltbeitzel, Anke, Glasser, Gunnar, Langner, Andreas, Müller, Frank, Gösele, Ulrich, Knoll, Wolfgang, Azzaroni, Omar

Journal:

ACS Applied Materials & Interfaces

Year:

2010

Language:

english

File:

PDF, 2.60 MB

english, 2010

6

Effect of the Si/SiO[sub 2] interface on self-diffusion of Si in semiconductor-grade SiO[sub 2]

Fukatsu, Shigeto, Takahashi, Tomonori, Itoh, Kohei M., Uematsu, Masashi, Fujiwara, Akira, Kageshima, Hiroyuki, Takahashi, Yasuo, Shiraishi, Kenji, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 307 KB

english, 2003

7

Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs

Chen, Chang-Ho, Gösele, Ulrich M., Tan, Teh Y.

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 385 KB

english, 1999

8

All dielectric hard x-ray mirror by atomic layer deposition

Szeghalmi, Adriana, Senz, Stephan, Bretschneider, Mario, Gösele, Ulrich, Knez, Mato

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 657 KB

english, 2009

9

Ordered Arrays of Vertically Aligned [110] Silicon Nanowires by Suppressing the Crystallographically Preferred Etching Directions

Huang, Zhipeng, Shimizu, Tomohiro, Senz, Stephan, Zhang, Zhang, Zhang, Xuanxiong, Lee, Woo, Geyer, Nadine, Gösele, Ulrich

Journal:

Year:

2009

Language:

english

File:

PDF, 342 KB

english, 2009

10

GaAs on Si heterostructures obtained by He and/or H implantation and direct wafer bonding

Radu, I., Szafraniak, I., Scholz, R., Alexe, M., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 1.47 MB

english, 2003

11

A “smarter-cut” approach to low temperature silicon layer transfer

Tong, Q.-Y., Scholz, R., Gösele, U., Lee, T.-H., Huang, L.-J., Chao, Y.-L., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1998

Language:

english

File:

PDF, 582 KB

english, 1998

12

Oxidation Rate Effect on the Direction of Metal-Assisted Chemical and Electrochemical Etching of Silicon

Huang, Zhipeng, Shimizu, Tomohiro, Senz, Stephan, Zhang, Zhang, Geyer, Nadine, Gösele, Ulrich

Journal:

The Journal of Physical Chemistry C

Year:

2010

Language:

english

File:

PDF, 2.69 MB

english, 2010

13

Low temperature GaAs/Si direct wafer bonding

Alexe, M., Dragoi, V., Reiche, M., Gösele, U.

Journal:

Electronics Letters

Year:

2000

Language:

english

File:

PDF, 246 KB

english, 2000

14

Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires †

Schmidt, V., Wittemann, J. V., Gösele, U.

Journal:

Chemical Reviews

Year:

2010

Language:

english

File:

PDF, 3.28 MB

english, 2010

15

Facile Large-Scale Fabrication of Proton Conducting Channels

Yameen, Basit, Kaltbeitzel, Anke, Langner, Andreas, Duran, Hatice, Müller, Frank, Gösele, Ulrich, Azzaroni, Omar, Knoll, Wolfgang

Journal:

Journal of the American Chemical Society

Year:

2008

Language:

english

File:

PDF, 691 KB

english, 2008

16

Si-CdSSe Core/Shell Nanowires with Continuously Tunable Light Emission

Pan, An Lian, Yao, Lide, Qin, Yong, Yang, Yang, Kim, Dong Sik, Yu, Richeng, Zou, Bingsuo, Werner, Peter, Zacharias, Margit, Gösele, Ulrich

Journal:

Year:

2008

Language:

english

File:

PDF, 682 KB

english, 2008

17

Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide

Scholz, R. F., Werner, P., Gösele, U., Engler, N., Leipner, H. S.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 513 KB

english, 2000

18

Modeling of nucleation and growth of voids in silicon

Plekhanov, P. S., Gösele, U. M., Tan, T. Y.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

19

Fluorine-enhanced low-temperature wafer bonding of native-oxide covered Si wafers

Tong, Q.-Y., Gan, Q., Fountain, G., Enquist, P., Scholz, R., Gösele, U.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 501 KB

english, 2004

20

Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Egger, U., Schultz, M., Werner, P., Breitenstein, O., Tan, T. Y., Gösele, U., Franzheld, R., Uematsu, M., Ito, H.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 491 KB

english, 1997

21

Characterization of microrod arrays by image analysis

Hillebrand, Reinald, Grimm, Silko, Giesa, Reiner, Schmidt, Hans-Werner, Mathwig, Klaus, Gösele, Ulrich, Steinhart, Martin

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 706 KB

english, 2009

22

[AIP National renewable energy laboratory and sandia national laboratories photovoltaics program review meeting - Lakewood, Colorado (USA) (18-22 Nov 1996)] AIP Conference Proceedings - Physical and numerical modeling of impurity gettering in silicon

Tan, T. Y., Gafiteanu, R., Gösele, U. M.

Year:

1997

Language:

english

File:

PDF, 855 KB

english, 1997

23

Domain structures and piezoelectric properties of Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] nanocapacitors

Han, Hee, Park, Yong Jun, Baik, Sunggi, Lee, Woo, Alexe, Marin, Hesse, Dietrich, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.04 MB

english, 2010

24

[ECS 211th ECS Meeting - Chicago, Illinois (May 6-May 10, 2007)] ECS Transactions - Strained Silicon-On-Insulator - Fabrication and Characterization

Reiche, Manfred, Himcinschi, C., Gösele, U., Christiansen, S., Mantl, S., Buca, D., Zhao, Q.T., Feste, S., Loo, R., Nguyen, D., Buchholtz, W., Wei, A., Horstmann, M., Feijoo, D., Storck, P.

Year:

2007

Language:

english

File:

PDF, 534 KB

english, 2007

25

Microstructural evolution in H ion induced splitting of freestanding GaN

Moutanabbir, O., Scholz, R., Senz, S., Gösele, U., Chicoine, M., Schiettekatte, F., Süßkraut, F., Krause-Rehberg, R.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 534 KB

english, 2008

26

Magnetic-field dependence of spin waves in ordered permalloy nanowire arrays in two dimensions

Liu, H. Y., Wang, Z. K., Lim, H. S., Ng, S. C., Kuok, M. H., Lockwood, D. J., Cottam, M. G., Nielsch, K., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

27

Diffraction properties of two-dimensional photonic crystals

von Freymann, G., Koch, W., Meisel, D. C., Wegener, M., Diem, M., Garcia-Martin, A., Pereira, S., Busch, K., Schilling, J., Wehrspohn, R. B., Gösele, U.

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 471 KB

english, 2003

28

Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting

Moutanabbir, O., Senz, S., Scholz, R., Christiansen, S., Reiche, M., Avramescu, A., Strauss, U., Gösele, U.

Journal:

Electrochemical and Solid-State Letters

Year:

2009

Language:

english

File:

PDF, 403 KB

english, 2009

29

Ferroelectric-semiconductor heterostructures obtained by direct wafer bonding

Alexe, Marin, Kästner, Gerhard, Hesse, Dietrich, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 680 KB

english, 1997

30

Transport of thermodynamic information by self-interstitials between precipitates in silicon

Marioton, B. P. R., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 1.12 MB

english, 1988

31

Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy

Ou, Xin, Kanungo, Pratyush Das, Kögler, Reinhard, Werner, Peter, Gösele, Ulrich, Skorupa, Wolfgang, Wang, Xi

Journal:

Year:

2010

Language:

english

File:

PDF, 4.50 MB

english, 2010

32

Nucleation barrier of voids and dislocation loops in silicon

Tan, T. Y., Plekhanov, P., Gösele, U. M.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 337 KB

english, 1997

33

Diffusion mechanism of zinc and beryllium in gallium arsenide

Yu, S., Tan, T. Y., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 2.30 MB

english, 1991

34

Transient carrier transfer in tunnel injection structures

Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Gösele, U., Novikov, B. V., Sokolov, A. S., Samsonenko, Y. B., Egorov, V. A., Cirlin, G. E.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 530 KB

english, 2008

35

Simple cubic three-dimensional photonic crystals based on macroporous silicon and anisotropic posttreatment

Matthias, Sven, Müller, Frank, Gösele, Ulrich

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 687 KB

english, 2005

36

Influence of dislocations on diffusion-induced nonequilibrium point defects in III-V compounds

Marioton, B. P. R., Tan, T. Y., Gösele, U.

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 542 KB

english, 1989

37

Empirical molecular dynamic study of SiC(0001) surface reconstructions and bonded interfaces

Koitzsch, C., Conrad, D., Scheerschmidt, K., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 841 KB

english, 2000

38

Structural and optical properties of InAs–GaAs quantum dots subjected to high temperature annealing

Kosogov, A. O., Werner, P., Gösele, U., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu., Zhukov, A. E., Kop’ev, P. S., Bert, N. A., Alferov, Zh. I.

Journal:

Applied Physics Letters

Year:

1996

Language:

english

File:

PDF, 516 KB

english, 1996

39

Recrystallization of silicon amorphized by carbon implantation

Chevacharoenkul, Sopa, Ilzhoefer, John R., Feijóo, Diego, Gösele, Ulrich

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 610 KB

english, 1991

40

The contribution of vacancies to carbon out-diffusion in silicon

Scholz, R. F., Werner, P., Gösele, U., Tan, T. Y.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 270 KB

english, 1999

41

The role of silicon self-interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon

W. B. Rogers, H. Z. Massoud, R. B. Fair, U. M. Gösele, T. Y. Tan, G. A. Rozgonyi

Year:

1989

Language:

english

File:

PDF, 806 KB

english, 1989

42

Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs

T. Y. Tan, U. Gösele

Year:

1988

Language:

english

File:

PDF, 641 KB

english, 1988

43

Self-interstitial enhanced carbon diffusion in silicon

J. P. Kalejs, L. A. Ladd, U. Gösele

Year:

1984

Language:

english

File:

PDF, 431 KB

english, 1984

44

Tuning of the interdot resonance in stacked InAs quantum dot arrays by an external electric field

V. G. Talalaev, J. W. Tomm, A. S. Sokolov, I. V. Shtrom, B. V. Novikov, A. T. Winzer, R. Goldhahn, G. Gobsch, N. D. Zakharov, P. Werner, U. Gösele, G. E. Cirlin, A. A. Tonkikh, V. M. Ustinov, G. G. T

Year:

2006

Language:

english

File:

PDF, 466 KB

english, 2006

45

Macroporous-silicon-based three-dimensional photonic crystal with a large complete band gap

Hillebrand, R., Senz, St., Hergert, W., Gösele, U.

Journal:

Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 389 KB

english, 2003

46

Determination of vacancy and self-interstitial contributions to gallium self-diffusion in GaAs

Tan, T. Y., Yu, S., Gösele, U.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 708 KB

english, 1991

47

[AIP Photovoltaic advanced research and development project - Denver, Colorado (USA) (1992)] AIP Conference Proceedings - Photovoltaic-relevant properties of intrinsic point defects in crystalline silicon

Gösele, U., Taylor, W. J., Zimmermann, H., Tan, T. Y.

Year:

1992

File:

PDF, 661 KB

1992

48

Reducing Stress on Cells with Apoferritin-Encapsulated Platinum Nanoparticles

Zhang, Lianbing, Laug, Linda, Münchgesang, Wolfram, Pippel, Eckhard, Gösele, Ulrich, Brandsch, Matthias, Knez, Mato

Journal:

Year:

2010

Language:

english

File:

PDF, 3.67 MB

english, 2010

49

Mesoporous Block Copolymer Nanorods by Swelling-Induced Morphology Reconstruction

Wang, Yong, Gösele, Ulrich, Steinhart, Martin

Journal:

Year:

2008

Language:

english

File:

PDF, 1.81 MB

english, 2008

50

Improvement of minority carrier diffusion length in Si by Al gettering

Joshi, Subhash M., Gösele, Ulrich M., Tan, Teh Y.

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1015 KB

english, 1995

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